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vishay siliconix sip12101 document number: 73057 s09-1453-rev. b, 03-aug-09 www.vishay.com 1 high performance step-down dc-dc converter with adjustable output voltage description the sip12101 is a high efficiency 600 ma step down converter with internal low on resistance power mosfet switch and synchronous rectifier transistors. it is designed to convert one cell lilon battery or three cell alkaline battery voltages to an adjustable dc output. the integrated high frequency error amplifier with internal compensation minimizes external components. 2 mhz switching permits use of small external inductor and capacitor sizes allowing one of the smallest solutions. the sip12101 is available in the 10 pin msop and is specified to operate over the industrial temperature range of - 40 c to 85 c. features ? 2 mhz pwm operation ? integrated mosfet switches ? 2.6 v to 6.0 v input voltage range ? minimal number of external components ? up to 96 % conversion efficiency ? 600 ma load capability ? 100 % cuty cycle allows low dropout ? integrated compensation circuit ? over-current protection ? shutdown current < 2 ma ? thermal shutdown ? integrated uvlo ? 10 pin msop applications ? pdas/palmtop pcs ? lcd podules ? portable image scanners ? gps receivers ? smart phones ? mp3 players ? 3g cell phone ? digital cameras typical applications circuit v dd enable battery lx v in sd v dd pgnd fb agnd v out sip12101 2.2 h c out 4.7 f c in 10 f v dd r 2 r 1 ref ref v dd
www.vishay.com 2 document number: 73057 s09-1453-rev. b, 03-aug-09 vishay siliconix sip12101 notes: a. device mounted with all leads soldered or welded to pc board. b. derate 7.4 mw/c above 85 c. c. derate 14 mw/c above 85 c. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. absolute maximum ratings parameter limit unit voltages referenced to agnd = 0 v v in , v dd 6.2 v lx, sd , fb, c ref - 0.3 to 6.2 (or to v dd + 0.3 whichever is less) gnd - 0.3 to + 0.3 esd rating 2kv storage temperature - 65 to 125 c operating junction temperature 150 power dissipation (package) a 10-pin msop b 481 mw 10-pin mlp33 915 thermal impedance ( ja ) 10-pin msop 135 c/w peak inductor current 1.8 a recommended operating range parameter limit unit v in range 2.6 to 5.5 v c in 10 f ceramic c out 4.7 f ceramic inductor 2.2 h load current 0 to 600 ma specifications parameter symbol test conditions unless specified - 40 c to 85 c, v in = v dd , c in = 10 f, c out = 4.7 f l = 2.2 h, 2.6 v v in 5.5 v, r 1 = 11.3 k , r 2 = 20 k limits unit min. a typ. b max. a under voltage lockout (uvlo) under voltage lockout (turn-on) v in rising 2.3 2.5 v hysteresis 0.1 shutdown (sd ) logic high v sdh 1.6 v logic low v sdl 0.4 delay to output c t en settle within 2 % accuracy sd rising t r < 1 s r l = 3.3 100 s r l = 51 100 pull down i sd input at v in a oscillator frequency f osc 1.622.4mhz error amplifier (fb pin) fb voltage accuracy v fb t a = 25 c 1.185 1.215 1.245 v t a = - 40 c to 85 c 1.170 1.260 power supply rejection psrr v in = 2.6 v to 5.5 v dc 60 db input bias current i fb v fb = 1.25 v - 1 0.01 1 a
document number: 73057 s09-1453-rev. b, 03-aug-09 www.vishay.com 3 vishay siliconix sip12101 notes: a. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. b. typical values are for design aid only, not guaranteed or subject to production testing. c. guaranteed by design. d. settling times, t s , apply after t en . e. bypass is a device mode of operation, in which, the device is in 100 % duty cycle. pin configuration specifications parameter symbol test conditions unless specified - 40 c to 85 c, v in = v dd , c in = 10 f, c out = 4.7 f l = 2.2 h, 2.6 v v in 5.5 v, r 1 = 11.3 k , r 2 = 20 k limits unit min. a typ. b max. a converter operation maximum output current i load v in = 3.6 v 600 ma dropout voltage e v dd v in = 2.6 v, i out = 600 ma 190 300 mv closed loop bandwidth bw 300 khz load regulation c v in = 3.6 v, v out = 1.9 v at 25 c i out = 30 ma to 600 ma 0.5 % line regulation v out = 3.0 v, v in = 3.5 v to 5.5 v 0.1 %/v maximum inductor peak current limit i lpk 1500 ma on resistance - p-channel and n-channel r ds(on) v in = 3.6 v 250 m 250 output ripple voltage 0.05 c out(esr) i out = 600 ma 60 mv p-p efficiency v in = 3.6 v, v out = 3.3 v i out = 600 ma 90 % frequency i out 30 ma 20 khz supply current input supply current i supply (v dd & v in ) i out = 0 ma, v in = 3.6 v, (not switching, fb = gnd) 450 750 a shutdown supply current i sd sd = low 2 thermal shutdown thermal shutdown temperature c t j(s/d) 165 c thermal hysteresis c 20 10 l x pgnd fb agnd msop-10 agnd v in 1 2 3 9 8 ref v dd top view 56 v dd sd 47
www.vishay.com 4 document number: 73057 s09-1453-rev. b, 03-aug-09 vishay siliconix sip12101 functional block diagram pin description pin number name function 1 l x inductor connection 2 agnd low power analog ground 3 fb output voltage feedback 4 v dd input supply voltage for the analog circuit. 5 ref internal reference, no connec tion should be made to this pin. 6 v dd input supply voltage for the analog circuit. 7sd logic low disables ic and reduces quiescent current to below 2 a 8 agnd must be connected to agnd. 9 v in input supply voltage 10 pgnd low impedance power ground ordering information part number marking temperature package SIP12101DH-T1 2101 - 40 c to 85 c msop-10 additional voltage options are available. eval kit temperature range board sip12101db - 40 c to 85 c surface mount - + error amplifier - + pwm comparator voltage reference, uvlo 2mhz oscillator to ic bias pwm pmos current sense v dd v in fb agnd sd pgnd l x 2mhz oscillator clamp ref sip12101 agnd v dd
document number: 73057 s09-1453-rev. b, 03-aug-09 www.vishay.com 5 vishay siliconix sip12101 detail operation general the sip12101 is a high efficiency synchronous dc-dc converter that is ideally suited for lithium ion battery or three cell alkaline applications, as well as step-down of 3.3 v or 5.0 v supplies. the major blocks of the sip12101 are shown in the functional block diagram. the 0.25 internal mosfets switching at a frequency of 2 mhz minimize pc board space while providing high conversion efficiency and performance. the high frequency error-amplifier with built-in loop compensation minimizes external components and provides rapid output settling times of < 30 s. sensing of the inductor current for control is accomplished internally without power wasting resistors. start-up when voltage is applied to v in and v dd , the under-voltage lockout (uvlo) circuit prevents the oscillator and control circuitry from turning on until the voltage on the exceeds 2.4 v. with a typical uvlo hyst eresis of 0.1 v, the converter operates continuously until the voltage on v in drops below 2.3 v, whereupon the converter shuts down. this hysteresis prevents false start-stop cycling as the input voltage approaches the uvlo switchin g threshold. the start-up sequence occurs after sd switches from low to high with v in applied, or after vin rises above the uvlo threshold and sd is a logic high. pwm sip12101 operates as a 2 mhz fixed frequency voltage mode converter. an nmos synchronous rectification mosfet transistor provides very high conversion efficiency for large load currents by minimizing the conduction losses. output load currents can range from 0 to 600 ma. the error amplifier and compar ator control the duty cycle of the pmos mosfet to continuously force the ref pin and fb pin voltages to be equal. as the input-to-output voltage difference drops, th e duty cycle of the pmos mosfet can reach 100 % to allow system designers to extract the maximum stored energy from the battery. the dropout voltage is 190 mv at 600 ma. during each cycle, the pmos switch current is limited to a maximum of 1.5 a (typical) thereby protecting the ic while continuing to force maximum current into the load. oscillator the internal oscillator provides for a fixed 2 mhz switching frequency. dynamic output voltage control (ref) the sip12101 is designed with an adjustable output voltage which has a change of v fb to v in - v drop . v out is defined according to the following relationship: converter shutdown (sd pin) with logic low level on the sd pin, the sip12101 is shutdown. shutdown reduces current consumption to less than 2 a by shutting off all of the internal circuits. both the pmos and nmos transistors are turned off. a logic high enables the ic to start up as described in "start-up" section. thermal shutdown the sip12101 includes therma l shutdown circuitry, which turns off the regulator when the junction temperature exceeds 165 c. once the junction temperature drops below 145 c, the regulator is enabled. if the condition causing the over temperature, the sip1 2101 begins thermal cycling, turning the regulator on and off in response to junction temperature. restart from a thermal shutdown condition is the same as described in the "start-up" section. v out =1+ r 1 r 2 v fb ()
www.vishay.com 6 document number: 73057 s09-1453-rev. b, 03-aug-09 vishay siliconix sip12101 applications circuit enable batt lx v in sd v dd pgnd fb agnd v out sip12101 2.2 h c out 4.7 f c in 10 f v dd r 2 r 1 c 2 c 1 ref ref agnd c in = 10 f, ceramic, murata grm42-2x5r106k16 c 1 ,c 2 = 0.01 f, vishay vj0603y 104kxxat c out = 4.7 f, ceramic, murata grm42-6x5r475k16 r 1 =8.2k , vishay crcw06031132f r 2 =20k , vishay crcw06032002f l 1 = 2.2 h, toko a914byw-2r2m
document number: 73057 s09-1453-rev. b, 03-aug-09 www.vishay.com 7 vishay siliconix sip12101 typical characteristics figure 1. pwm mode v out settling t en v sdh sd v out t r t f undefined (load dependent) time v sdl o indicates v out settles to 2 % of the final value. dropout voltage vs. i load 0 40 80 120 160 200 0 100 200 300 400 500 600 load current (ma) ) v m ( e g a t l o v t u o p o r d v in =3.6v v in =5.5v v in =2.6v v out ripple 0 4 8 12 16 20 0 30 60 90 120 150 load current (ma) v in =3.6v v out =1.9v c out =4.7 f v t u o v m ( e l p p i r p - p ) pwm
www.vishay.com 8 document number: 73057 s09-1453-rev. b, 03-aug-09 vishay siliconix sip12101 typical switching waveforms (v in = 3.6 v, v out = 3.0 v) heavy-load switching waveforms i out = 600 ma light-load switching waveforms i out = 0 ma 200 ns/di v v lx ,5 v /di v ind u ctor c u rrent 500 ma/di v v out (ac-co u pled) 10 m v /di v 200 ns/di v v lx ,5 v /di v ind u ctor c u rrent 200 ma/di v v out (ac-co u pled) 10 m v /di v medium-load switching waveforms i out = 300 ma 200 ns/di v v lx ,2 v /di v ind u ctor c u rrent 500 ma/di v v out (ac-co u pled) 10 m v /di v
document number: 73057 s09-1453-rev. b, 03-aug-09 www.vishay.com 9 vishay siliconix sip12101 typical switching waveforms (v in = 3.6 v, v out = 1.9 v) heavy-load switching waveforms i out = 600 ma light-load switching waveforms i out = 0 ma 200 ns/di v v lx ,5 v /di v ind u ctor c u rrent 500 ma/di v v out (ac-co u pled) 10 m v /di v 200 ns/di v v lx ,5 v /di v ind u ctor c u rrent 200 ma/di v v out (ac-co u pled) 10 m v /di v medium-load switching waveforms i out = 300 ma 200 ns/di v v lx ,5 v /di v ind u ctor c u rrent 500 ma/di v v out (ac-co u pled) 10 m v /di v
www.vishay.com 10 document number: 73057 s09-1453-rev. b, 03-aug-09 vishay siliconix sip12101 typical start-up and shutdo wn transient waveforms (v in = 3.6 v, v out = 1.9 v) start-up, r load = 4 shutdown, r load = 4 20 s/di v v sd ,1 v /di v v out ,500m v /di v 200 s/di v v sd ,1 v /di v v out , 500 m v /di v start-up, v in = v sd = 3.6 v, r load = 4 enable switching, r load = 4 20 s/di v v i n , v sd ,1 v /di v v out , 500 m v /di v 20 s/di v v sd 1 v /di v v out ,500m v /di v
document number: 73057 s09-1453-rev. b, 03-aug-09 www.vishay.com 11 vishay siliconix sip12101 typical load transient waveforms (v in = 3.6 v, v out = 1.9 v) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73057 . load transient i load = 30 to 500 ma, l = 2.2 h 10 s/di v v out (ac-co u pled) 50 m v /di v i load , 200 ma /di v
notes: 1. die thickness allowable is 0.203 0.0127. 2. dimensioning and tolerances per ansi.y14.5m-1994. 3. dimensions ?d? and ?e 1 ? do not include mold flash or protrusions, and are measured at datum plane -h- , mold flash or protrusions shall not exceed 0.15 mm per side. 4. dimension is the length of terminal for soldering to a substrate. 5. terminal positions are shown for reference only. 6. formed leads shall be planar with respect to one another within 0.10 mm at seating plane. 7. the lead width dimension does not include dambar protrusion. allowable dambar protrusion shall be 0.08 mm total in excess of the lead width dimension at maximum material condition. dambar cannot be located on the lower radius or the lead foot. minimum space between protrusions and an adjacent lead to be 0.14 mm. see detail ?b? and section ?c-c?. 8. section ?c-c? to be determined at 0.10 mm to 0.25 mm from the lead tip. 9. controlling dimension: millimeters. 10. this part is compliant with jedec registration mo-187, variation aa and ba. 11. datums -a- and -b- to be determined datum plane -h- . 12. exposed pad area in bottom side is the same as teh leadframe pad size. 5 n n-1 a b c 0.20 (n/2) tips) 2x n/2 2 1 0.60 0.50 0.60 e top view e see detail ?b? -h- 3 d -a- seating plane a 1 a 6 c 0.10 side view 0.25 bsc 4 l -c- seating plane 0.07 r. min 2 places parting line detail ?a? (scale: 30/1) 0.48 max detail ?b? (scale: 30/1) dambar protrusion 7 c 0.08 m b s a s b b 1 with plating base metal c 1 c section ?c-c? scale: 100/1 (see note 8) see detail ?a? a 2 0.05 s c c ? 3 e 1 -b- end view e1 0.95 package information vishay siliconix document number: 72817 28-jan-04 www.vishay.com 1 msop: 10-leads (power ic only) jedec part number: mo-187, (variation aa and ba) n = 10l millimeters dim min nom max note a ? ? 1.10 a 1 0.05 0.10 0.15 a 2 0.75 0.85 0.95 b 0.17 ? 0.27 8 b 1 0.17 0.20 0.23 8 c 0.13 ? 0.23 c 1 0.13 0.15 0.18 d 3.00 bsc 3 e 4.90 bsc e 1 2.90 3.00 3.10 3 e 0.50 bsc e 1 2.00 bsc l 0.40 0.55 0.70 4 n 10 5 0 4 6 ecn: s-40082?rev. a, 02-feb-04 dwg: 5922
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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